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CM100TU-12F 参数 Datasheet PDF下载

CM100TU-12F图片预览
型号: CM100TU-12F
PDF下载: 下载PDF文件 查看货源
内容描述: 沟槽栅设计六IGBTMOD⑩百安培/ 600伏 [Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts]
分类和应用: 双极性晶体管
文件页数/大小: 4 页 / 130 K
品牌: POWEREX [ POWEREX POWER SEMICONDUCTORS ]
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CM100TU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design
Six IGBTMOD™
100 Amperes/600 Volts
J
S - NUTS (5 TYP)
CM
N
K
P
K
R
T (4 TYP.)
P
GUP EUP
GVP EVP
GWP EWP
L
B E
N
L
N
L
M
Q
TC
MEASURING
POINT
TC
MEASURING
POINT
GUN EUN
GVN EVN
GWN EWN
U
V
W
J
L
N
D
A
W - THICK x X - WIDE
TAB (12 PLACES)
J
L
N
L
V
H
C
F
G
P
GUP
RTC
EUP
U
GUN
RTC
EUN
N
EVN
GVN
RTC
EWN
EVP
V
GWN
RTC
GVP
RTC
EWP
W
A
GWP
RTC
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplies
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
4.02
3.58
Millimeters
102.0
91.0
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Inches
0.47
0.75
0.74
1.55
0.05
M4
0.22 Dia.
0.02
0.12
0.02
0.110
Millimeters
11.85
19.1
18.7
39.3
1.25
M4
5.5 Dia.
0.5
3.05
0.5
2.79
1.14 +0.04/-0.02 29.0 +1.0/-0.5
3.15±0.01
2.91±0.01
0.16
1.02
0.31
0.79
0.39
0.43
80.0±0.25
74.0±0.25
4.0
26.0
8.1
20.0
10.0
11.0
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100TU-12F is a
600V (V
CES
), 100 Ampere Six-
IGBT IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
100
V
CES
Volts (x 50)
12
1