Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TU-12H
Six IGBTMOD™ U-Series Module
100 Amperes/600 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation (T
j
< 150°C)
Mounting Torque, M4 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM100TU-12H
-40 to 150
-40 to 125
600
±20
100
200*
100
200*
400
15
31
570
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 10mA, V
CE
= 10V
I
C
= 100A, V
GE
= 15V, T
j
= 25°C
I
C
= 100A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage*
V
CC
= 300V, I
C
= 100A, V
GE
= 15V
I
E
= 100A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6
2.4
2.6
200
–
Max.
1
0.5
7.5
3.0
–
–
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 300V, I
C
= 100A,
V
GE1
= V
GE2
= 15V,
R
G
= 6.3 , Resistive
Load Switching Operation
I
E
= 100A, di
E
/dt = -200A/µs
I
E
= 100A, di
E
/dt = -200A/µs
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
0.24
Max.
8.8
4.8
1.3
100
250
200
300
160
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Test Conditions
Per IGBT 1/6 Module
Per Free-Wheel Diode 1/6 Module
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
0.018
Max.
0.31
0.7
–
Units
°C/W
°C/W
°C/W
82
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
