MITSUBISHI HVIGBT MODULES
CM1200HC-50H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM1200HC-50H
q
I
C ................................................................
1200A
q
V
CES .......................................................
2500V
q
Insulated Type
q
1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57
±0.25
190
171
57
±0.25
57
±0.25
6 - M8 NUTS
C
C
C
C
G
E
C
C
C
20
CM
C
E
E
E
124
±0.25
140
E
E
E
40
CIRCUIT DIAGRAM
E
G
20.25
41.25
3 - M4 NUTS
79.4
61.5
13
61.5
5.2
15
40
8 -
φ7MOUNTING
HOLES
38
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
5
LABEL
29.5
28
Oct. 2002
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
