CM200DU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design
Dual IGBTMOD™
200 Amperes/600 Volts
N
P - NUTS (3 PLACES)
TC MEASURING
POINT
A
D
Q (2 PLACES)
E
E2G2
CM
C2E1
E2
C1
F
G
B
H
G1E1
F
M
K
K
J
R
C
L
G2
E2
RTC
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
UPS
□
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200DU-12F is a
600V (V
CES
), 200 Ampere Dual
IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
200
V
CES
Volts (x 50)
12
C2E1
E2
C1
RTC
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
Inches
3.70
1.89
Millimeters
94.0
48.0
Dimensions
J
K
L
M
N
P
Q
R
Inches
0.53
0.91
1.13
0.67
0.28
M5
0.26 Dia.
0.16
Millimeters
13.5
23.0
28.7
17.0
7.0
M5
6.5 Dia.
4.0
1.18 +0.04/-0.02 30.0 +1.0/-0.5
3.15±0.01
0.43
0.16
0.71
0.02
80.0±0.25
11.0
4.0
18.0
0.5
1
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
