CM400HB-90H 参数 Datasheet PDF下载

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM400HB-90H

Single IGBTMOD™ HVIGBT

400 Amperes/4500 Volts

Absolute Maximum Ratings,

T

j

= 25

°C

unless otherwise specified

Ratings

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (V

GE

= 0V)

Gate-Emitter Voltage (V

CE

= 0V)

Collector Current (T

c

= 25°C)

Peak Collector Current (Pulse)

Diode Forward Current** (T

c

= 25°C)

Diode Forward Surge Current** (Pulse)

Maximum Collector Dissipation (T

c

= 25°C, IGBT Part, T

j

≤

125°C)

Max. Mounting Torque M8 Terminal Screws

Max. Mounting Torque M6 Mounting Screws

Max. Mounting Torque M4 Auxiliary Terminal Screws

Module Weight (Typical)

Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)

* Pulse width and repetition rate should be such that device junction temperature (T

j

) does not exceed T

j(max)

rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Symbol

T

j

T

stg

V

CES

V

GES

I

C

I

CM

I

E

I

EM

P

C

–

–

–

–

V

iso

CM400HB-90H

-40 to 150

-40 to 125

4500

±20

400

800*

400

800*

4300

115

53

17

1.5

6000

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

in-lb

in-lb

in-lb

kg

Volts

Static Electrical Characteristics,

T

j

= 25

°C

unless otherwise specified

Characteristics

Collector-Cutoff Current

Gate Leakage Current

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Symbol

I

CES

I

GES

V

GE(th)

V

CE(sat)

Q

G

V

EC

Test Conditions

V

CE

= V

CES

, V

GE

= 0V

V

GE

= V

GES

, V

CE

= 0V

I

C

= 40mA, V

CE

= 10V

I

C

= 400A, V

GE

= 15V, T

j

= 25°C

I

C

= 400A, V

GE

= 15V, T

j

= 125°C

Total Gate Charge

Emitter-Collector Voltage**

V

CC

= 2250V, I

C

= 400A, V

GE

= 15V

I

E

= 400A, V

GE

= 0V

Min.

–

–

4.5

–

–

–

–

Typ.

–

–

6.0

3.0

3.3

3.6

4.0

Max.

8.0

0.5

7.5

3.9*

–

–

5.2

Units

mA

µ

A

Volts

Volts

Volts

µC

Volts

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

2