CM50TF-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six-IGBT IGBTMOD™
H-Series Module
50 Amperes/600 Volts
A
B
C
B
u
P E
u
P
B
v
P E
v
P
B
w
P E
w
P
P
J
N
u
v
w
E
N
D
B
u
N E
u
N
B
v
N E
v
N
B
w
N E
w
N
S - DIA.
(2 TYP.)
M
R
F
R
L
.250 TAB
F
R
L
K
Q
.110 TAB
G
P
H
R
P
(BuP)*
GuP
EuP
u
(BvP)
GvP
EvP
v
(BwP)
GwP
EwP
w
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
□
High Frequency Operation
(20-25kHz)
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
Motion/Servo Control
□
UPS
□
Welding Power Supplies
□
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50TF-12H
is a 600V (V
CES
), 50 Ampere Six-
IGBT IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
50
V
CES
Volts (x 50)
12
(BuN)
GuN
EuN
N
(BvN)
GvN
EvN
(BwN)
GwN
EwN
* Parentheses indicate module marking
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
5.00
4.33±0.01
3.86
2.20
1.57
1.12
1.04
1.01
0.98
Millimeters
127.0
110.0±0.3
98.0
56.0
40.0
28.5
26.5
25.6
25.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.85
0.83
0.75
0.71
0.69
0.65
0.30
0.22 Dia.
Millimeters
21.5
21.0
19.0
18.0
17.5
16.5
7.5
Dia. 5.5
307
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
