MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM600E2Y-34H
q
I
C ...................................................................
600A
q
V
CES .......................................................
1700V
q
Insulated Type
q
1-elements in a pack (for brake)
APPLICATION
DC choppers, Dynamic braking choppers.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
57
±0.25
57
±0.25
4 - M8 NUTS
E1
E1
20
C2
G1
E1
C2
124
±0.25
140
30
C1
C1
E2
CM
C1
E2
E1
G1
C1
C2
G2
E2
CIRCUIT DIAGRAM
16
3 - M4 NUTS
40
53
55.2
11.85
6 -
φ
7
MOUNTING HOLES
5
35
11.5
14
38
31.5
28
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000
5
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
