CM75DY-24H 参数 Datasheet PDF下载

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM75DY-24H

Dual IGBTMOD™ H-Series Module

75 Amperes/1200 Volts

Absolute Maximum Ratings,

T

j

= 25

°C

unless otherwise specified

Ratings

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E SHORT)

Gate-Emitter Voltage

Collector Current

Peak Collector Current

Diode Forward Current

Diode Forward Surge Current

Power Dissipation

Max. Mounting Torque M5 Terminal Screws

Max. Mounting Torque M6 Mounting Screws

Module Weight (Typical)

V Isolation

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

Symbol

T

j

T

stg

V

CES

V

GES

I

C

I

CM

I

F

I

FM

P

d

–

–

–

V

RMS

CM75DY-24H

–40 to 150

–40 to 125

1200

±20

75

150*

75

150*

600

17

26

190

2500

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

in-lb

in-lb

Grams

Volts

Static Electrical Characteristics,

T

j

= 25

°C

unless otherwise specified

Characteristics

Collector-Cutoff Current

Gate Leakage Current

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Symbol

I

CES

I

GES

V

GE(th)

V

CE(sat)

Q

G

V

FM

Test Conditions

V

CE

= V

CES

, V

GE

= 0V

V

GE

= V

GES

, V

CE

= 0V

I

C

= 7.5mA, V

CE

= 10V

I

C

= 75A, V

GE

= 15V

I

C

= 75A, V

GE

= 15V, T

j

= 150°C

Total Gate Charge

Diode Forward Voltage

V

CC

= 600V, I

C

= 75A, V

GS

= 15V

I

E

= 75A, V

GS

= 0V

Min.

–

–

4.5

–

–

–

–

Typ.

–

–

6.0

2.5

2.25

375

–

Max.

1.0

0.5

7.5

3.4**

–

–

3.5

Units

mA

µ

A

Volts

Volts

Volts

nC

Volts

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics,

T

j

= 25

°C

unless otherwise specified

Characteristics

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Resistive

Load

Switching

Times

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Symbol

C

ies

C

oes

C

res

t

d(on)

t

r

t

d(off)

t

f

t

rr

Q

rr

I

E

= 75A, di

E

/dt = –150A/

µ

s

I

E

= 75A, di

E

/dt = –150A/

µ

s

V

CC

= 600V, I

C

= 75A,

V

GE1

= V

GE2

= 15V, R

G

= 4.2Ω

V

GE

= 0V, V

CE

= 10V, f = 1MHz

Test Conditions

Min.

–

–

–

–

–

–

–

–

–

Typ.

–

–

–

–

–

–

–

–

0.56

Max.

15

5.3

3

150

350

250

350

250

–

Units

nF

nF

nF

ns

ns

ns

ns

ns

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

µ

C

Thermal and Mechanical Characteristics,

T

j

= 25

°C

unless otherwise specified

Characteristics

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Contact Thermal Resistance

Symbol

R

th(j-c)

R

th(j-c)

R

th(c-f)

Test Conditions

Per IGBT

Per FWDi

Per Module, Thermal Grease Applied

Min.

–

–

–

Typ.

–

–

–

Max.

0.21

0.47

0.075

Units

°C/W

°C/W

°C/W

258