Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-24F
Trench Gate Design Six IGBTMOD™
75Amperes/1200 Volts
Dynamic Electrical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
–
Typ.
–
Max.
29
Units
nf
Input Capacitance
C
ies
Output Capacitance
Reverse Transfer Capacitance
C
V
= 10V, V
CE GE
= 0V
–
–
1.3
nf
oes
C
–
–
0.75
nf
res
Inductive
Load
Turn-on Delay Time
t
V
= 600V, I = 75A,
–
–
100
ns
ns
ns
ns
ns
µC
d(on)
CC
C
Rise Time
t
V
= V
= 15V,
–
–
50
400
300
150
–
r
GE1
GE2
= 4.2⍀,
G
Switch
Times
Turn-off Delay Time
Fall Time
t
R
–
–
d(off)
t
f
Inductive Load
Switching Operation
= 75A
–
–
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
t
–
–
rr
Q
I
–
3.1
rr
E
Thermal and Mechanical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/6 Module, T Reference
c
–
0.28
°C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R
D
Per FWDi 1/6 Module, T Reference
c
–
–
–
–
0.47
°C/W
°C/W
°C/W
th(j-c)
Point per Outline Drawing
Per IGBT 1/6 Module,
R
'Q
th(j-c)
0.19
0.015
T Reference Point Under Chip
c
R
Per Module, Thermal Grease Applied
–
th(c-f)
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
3
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