Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM800DU-12H
Dual IGBTMOD™ U-Series Module
800 Amperes/600 Volts
Absolute Maximum Ratings, T = 25 °C unless otherwise specified
j
Ratings
Symbol
CM800DU-12H
-40 to 150
-40 to 125
600
Units
°C
Junction Temperature
T
j
Storage Temperature
T
°C
stg
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
V
CES
V
GES
Volts
±20
Volts
Collector Current (T = 25°C)
I
800
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
c
C
Peak Collector Current
I
I
1600*
800
CM
Emitter Current** (T = 25°C)
I
E
c
Peak Emitter Current**
1600*
1500
EM
Maximum Collector Dissipation (T = 25°C, T ≤ 150°C)
P
c
c
j
Mounting Torque, M8 Main Terminal
–
95
Mounting Torque, M6 Mounting
G(E) Terminal, M4
Weight
–
–
–
40
in-lb
15
in-lb
1200
Grams
Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
rating.
* Pulse width and repetition rate should be such that the device junction temperature (T ) does not exceed T
j
j(max)
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
–
Typ.
Max.
2
Units
mA
Collector-Cutoff Current
Gate Leakage Voltage
I
V
V
= V
, V
CES GE
= 0V
= 0V
–
CES
GES
CE
GE
I
= V
, V
GES CE
–
–
0.5
7.5
3.15
–
µA
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
V
GE(th)
I
= 80mA, V
C CE
= 10V
4.5
–
6
Volts
Volts
Volts
nC
V
I
= 800A, V
= 15V, T = 25°C
2.55
2.75
CE(sat)
C
GE
j
I
= 800A, V
= 15V, T = 125°C
–
C
GE
j
Total Gate Charge
Q
V
CC
= 300V, I = 800A, V
GE
= 15V
–
1600
–
G
C
Emitter-Collector Voltage**
V
I
E
= 800A, V = 0V
GE
–
–
2.6
Volts
EC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
–
Typ.
–
Max.
70.4
38.4
10.4
400
Units
nf
Input Capacitance
C
ies
Output Capacitance
Reverse Transfer Capacitance
C
oes
V
= 10V, V
CE GE
= 0V
–
–
nf
C
res
–
–
nf
Resistive
Load
Turn-on Delay Time
t
V
= 300V, I = 800A,
–
–
ns
ns
ns
ns
ns
µC
d(on)
CC
C
Rise Time
t
V
= V = 15V,
GE1 GE2
= 3.1⍀, Resistive
G
–
–
2000
500
r
Switch
Times
Turn-off Delay Time
Fall Time
t
R
–
–
d(off)
t
Load Switching Operation
= 800A, di /dt = -1600A/µs
–
–
300
f
Diode Reverse Recovery Time**
t
I
I
–
–
160
rr
E
E
Diode Reverse Recovery Charge**
Q
rr
= 800A, di /dt = -1600A/µs
–
1.92
–
E
E
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Per IGBT 1/2 Module
Min.
–
Typ.
–
Max.
Units
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R
Q
0.083 °C/W
th(j-c)
th(j-c)
R
R
Per FWDi 1/2 Module
–
–
0.13
°C/W
°C/W
R
th(c-f)
Per Module, Thermal Grease Applied
–
0.010
–
2
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
