MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM800DZ-34H
q
I
C ...................................................................
800A
q
V
CES .......................................................
1700V
q
Insulated Type
q
2-elements in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
130
114
57
±0.25
57
±0.25
Dimensions in mm
4 - M8 NUTS
E1
E1
20
C2
C2
G1
G2
124
±0.25
140
30
E1
C2
C1
C1
E2
E2
CM
C1
E2
E1
G1
C1
C2
G2
E2
CIRCUIT DIAGRAM
16
40
6 - M4 NUTS
53
18
44
57
55.2
6 -
φ
7 MOUNTING HOLES
5
35
11.5
14
31.5
38
11.85
28
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
5
LABEL
Oct. 2002