MITSUBISHI HVIGBT MODULES
CM800HB-66H
HIGH POWER SWITCHING USE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM800HB-66H
q
I
C ...................................................................
800A
q
V
CES .......................................................
3300V
q
Insulated Type
q
1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
57
±0.25
57
±0.25
4 - M8 NUTS
C
20
C
C
C
C
124
±0.25
G
E
E
E
CM
C
E
E
E
G
140
40
CIRCUIT DIAGRAM
3 - M4 NUTS
10.35
10.65
48.8
6 -
φ7MOUNTING
HOLES
61.5
18
5.2
15
40
38
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000
29.5
28
5