MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30TM-8
STROBE FLASHER USE
CT30TM-8
OUTLINE DRAWING
10.5MAX.
5.2
Dimensions in mm
2.8
5.0
1.2
φ
3.2
1.3MAX.
0.8
17
13.5MIN.
3.8MAX.
8.5
2.54
2.54
0.5
2.6
q w e
w
q
q
GATE
w
COLLECTOR
e
EMITTER
¡V
CES ...............................................................................
400V
¡I
CM ...................................................................................
180A
e
TO-220F
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS
Symbol
V
CES
V
GES
V
GEM
I
CM
T
j
T
stg
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
Conditions
V
GE
= 0V
V
CE
= 0V, See notice 4
V
CE
= 0V, tw = 0.5s
See figure 1
Ratings
400
±30
±40
180
–40 ~ +150
–40 ~ +150
4.7MAX.
Unit
V
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
I
CES
I
GES
V
GE(th)
Parameter
(Tj = 25°C)
Test conditions
I
C
= 1mA, V
GE
= 0V
V
CE
= 400V, V
GE
= 0V
V
GE
=
±40V,
V
CE
= 0V
V
CE
= 10V, I
C
= 1mA
Limits
Min.
450
—
—
—
Typ.
—
—
—
—
Max.
—
10
±0.1
7.0
Unit
V
µA
µA
V
Feb.1999
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
