MITSUBISHI Nch POWER MOSFET
FK10VS-9
HIGH-SPEED SWITCHING USE
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
GS
= 0V
I
D
= 1mA
1.2
REVERSE RECOVERY TIME t
rr
(ns)
1.4
1.0
3
2
10
2
7
5
3
2
10
1 0
10
t
rr
3
2
10
1
7
5
I
rr
T
ch
= 25°C
T
ch
= 150°C
2 3
5 7 10
1
2 3
3
2
0.8
0.6
0.4
–50
0
50
100
150
10
0
5 7 10
2
CHANNEL TEMPERATURE Tch (°C)
SOURCE CURRENT I
S
(A)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–c)
(°C/W)
REVERSE RECOVERY CURRENT I
rr
(A)
REVERSE RECOVERY TIME t
rr
(ns)
DIODE REVERSE VS.
SOURCE CURRENT d
is
/d
t
CHARACTERISTIC
(TYPICAL)
5
5
I
S
= 10A
V
GS
= 0V
3
3
V
DD
= 250V 2
2
t
rr
10
2
7
5
3
2
I
rr
10
1
7
5
10
1
0
T
ch
= 25°C 10
T
ch
= 150°C 7
5
2 3
5 7 10
3
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
1
7
5
3
2
10
0
7
5
3
2
D=1
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
tw
T
D= tw
T
10
1
7
5
3
2
2 3
5 7 10
2
Single Pulse
10
–2
10
–4
2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
PULSE WIDTH t
w
(s)
10
–1
7
5
3
2
SOURCE CURRENT d
is
/d
t
(–A/µs)
REVERSE RECOVERY CURRENT I
rr
(A)
Feb.1999
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
3
10
2
10
d
is/
d
t
= –100A /µs
7
7
V
GS
= 0V
5
5
V
DD
= 250V
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
