MITSUBISHI Nch POWER MOSFET
FK16UM-6
HIGH-SPEED SWITCHING USE
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
5
3
2
10
3
7
5
Ciss
SWITCHING CHARACTERISTICS
(TYPICAL)
Tch = 25°C
V
DD
= 150V
V
GS
= 10V
R
GEN
= R
GS
= 25Ω
10
3
7
5
3
2
10
2
7
5
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
3
2
t
d(off)
10
2
7
5
3
2
10
1
10
0
2 3
t
f
t
r
t
d(on)
Coss
Crss
3 Tch = 25°C
2 f = 1MHz
V
GS
= 0V
10
1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
5 7 10
1
2 3
5 7 10
2
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
40
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
V
GS
= 0V
Pulse Test
T
C
= 125°C
25°C
24
75°C
GATE-SOURCE VOLTAGE V
GS
(V)
16
SOURCE CURRENT I
S
(A)
80
100
Tch = 25°C
I
D
= 16A
V
DS
= 50V
100V
200V
8
32
12
16
4
8
0
0
20
40
60
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0
50
100
150
200
250
5.0
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= 10V
I
D
= 1mA
4.0
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
