MITSUBISHI Nch POWER MOSFET
FS1UM-16A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
Parameter
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
I
GS
=
±100µA,
V
DS
= 0V
V
GS
=
±25V,
V
DS
= 0V
V
DS
= 800V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 0.5A, V
GS
= 10V
I
D
= 0.5A, V
GS
= 10V
I
D
= 0.5A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Limits
Min.
800
±30
—
—
2
—
—
0.6
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
3
9.43
4.72
1.0
270
26
4
9
12
35
30
1.0
—
Max.
—
—
±10
1
4
12.3
6.15
—
—
—
—
—
—
—
—
1.5
1.92
Unit
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
V
DD
= 200V, I
D
= 0.5A, V
GS
= 10V,
R
GEN
= R
GS
= 50Ω
I
S
= 0.5A, V
GS
= 0V
Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
10
1
7
5
3
2
80
60
40
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
DC
T
C
= 25°C
Single Pulse
tw = 100ms
1ms
10ms
100ms
20
0
0
50
100
150
200
3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
CASE TEMPERATURE T
C
(°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
T
C
= 25°C
Pulse Test
1.0
T
C
= 25°C
Pulse Test
V
GS
= 20V
10V
5V
DRAIN CURRENT I
D
(A)
1.6
DRAIN CURRENT I
D
(A)
V
GS
= 20V
10V
5V
P
D
= 65W
0.8
1.2
0.6
4.5V
0.8
4.5V
0.4
0.4
4V
0.2
4V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
