MITSUBISHI Nch POWER MOSFET
FS2KMJ-3
HIGH-SPEED SWITCHING USE
FS2KMJ-3
OUTLINE DRAWING
10
±
0.3
6.5
±
0.3
3
±
0.3
Dimensions in mm
2.8
±
0.2
15
±
0.3
f
3.2
±
0.2
14
±
0.5
3.6
±
0.3
1.1
±
0.2
1.1
±
0.2
0.75
±
0.15
E
0.75
±
0.15
2.54
±
0.25
2.54
±
0.25
4.5
±
0.2
1 2 3
2.6
±
0.2
¡4V
DRIVE
¡V
DSS ................................................................................
150V
¡r
DS (ON) (MAX) ..............................................................
0.75Ω
¡I
D ............................................................................................
2A
¡Integrated
Fast Recovery Diode (TYP.)
.............
65ns
¡V
iso ................................................................................
2000V
w
q
q
GATE
w
DRAIN
e
SOURCE
e
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
V
iso
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
L = 100µH
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
150
±20
2
8
2
2
8
15
–55 ~ +150
Unit
V
V
A
A
A
A
A
W
°C
°C
V
g
Feb.1999
AC for 1minute, Terminal to case
Typical value
–55 ~ +150
2000
2.0
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
