MITSUBISHI Nch POWER MOSFET
FS30ASJ-2
HIGH-SPEED SWITCHING USE
FS30ASJ-2
OUTLINE DRAWING
6.5
5.0
±
0.2
Dimensions in mm
r
5.5
±
0.2
1.5
±
0.2
0.5
±
0.1
1.0MAX.
2.3MIN.
10MAX.
1.0
A
0.5
±
0.2
0.8
0.9MAX.
2.3
2.3
2.3
q
w
e
wr
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
¡4V
DRIVE
¡V
DSS ...............................................................................
100V
¡r
DS (ON) (MAX) .............................................................
84mΩ
¡I
D ........................................................................................
30A
¡Integrated
Fast Recovery Diode (TYP.)
............
80ns
q
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
100
±20
30
120
30
30
120
35
–55 ~ +150
–55 ~ +150
0.26
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
L = 100µH
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
