MITSUBISHI Nch POWER MOSFET
FS30KM-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
50
40
30
20
10
0
Tch = 25°C
= 30A
V
GS = 0V
I
D
Pulse Test
V
DS = 10V
TC = 125°C
20V
40V
75°C
25°C
4
0
0
10
20
30
40
(nC)
50
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Q
g
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5.0
4.0
3.0
2.0
1.0
0
V
GS = 10V
V
DS = 10V
ID = 1mA
I
D
= 1/2I
D
5
Pulse Test
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
V
I
GS = 0V
D = 1mA
D = 1.0
5
0.5
3
2
0.2
0.1
100
7
5
3
2
0.05
0.02
0.01
P
DM
10–1
7
tw
Single Pulse
T
5
tw
D=
3
2
T
10–2
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
