MITSUBISHI Nch POWER MOSFET
FS50KMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5.0
T
C
= 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
50
T
C
= 25°C
Pulse Test
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
4.0
40
V
GS
= 4V
3.0
30
2.0
I
D
= 80A
20
10V
1.0
50A
30A
10
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
DRAIN CURRENT I
D
(A)
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
T
C
= 25°C
V
DS
= 10V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
75°C
125°C
V
DS
= 10V
Pulse Test
T
C
= 25°C
DRAIN CURRENT I
D
(A)
60
40
20
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
80
0
0
2
4
6
8
10
10
0 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
10
4
7
5
3
2
10
3
7
5
3
2
Coss
Crss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
t
f
Tch = 25°C
V
DD
= 15V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
d(off)
Ciss
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
t
r
t
d(on)
10
2
7
5
3
2
3 5 710
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
DRAIN CURRENT I
D
(A)
Feb.1999