MITSUBISHI Nch POWER MOSFET
FS50SM-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= 60V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 25A, V
GS
= 10V
I
D
= 25A, V
GS
= 10V
I
D
= 25A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
Limits
Min.
60
—
—
2.0
—
—
—
—
—
—
—
Typ.
—
—
—
3.0
17
0.43
32
2300
570
280
35
95
95
80
1.0
—
65
Max.
—
±0.1
0.1
4.0
22
0.55
—
—
—
—
—
—
—
—
1.5
1.78
—
Unit
V
µA
mA
V
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= 30V, I
D
= 25A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
—
—
—
—
—
—
I
S
= 25A, V
GS
= 0V
Channel to case
I
S
= 50A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
3
2
10
2
7
5
3
2
10
1
7
5
3
2
1ms
10ms
100ms
DC
tw = 10ms
80
60
100ms
40
20
0
0
50
100
150
200
10
0
7
T
C
= 25°C
5
Single Pulse
3
3 5 710
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
10V 8V
V
GS
= 20V
7V
P
D
= 70W
6V
CASE TEMPERATURE T
C
(°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
100
V
GS
= 20V 10V
8V
DRAIN CURRENT I
D
(A)
80
T
C
= 25°C
Pulse Test
DRAIN CURRENT I
D
(A)
7V
40
60
30
6V
40
P
D
= 70W
20
5V
20
5V
10
T
C
= 25°C
Pulse Test
0
0
1
2
3
4
5
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
