MITSUBISHI Nch POWER MOSFET
FS50UMJ-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
100
SOURCE CURRENT I
S
(A)
V
GS
= 0V
Pulse Test
10
T
ch
= 25°C
I
D
= 50A
8
80
6
60
4
V
DS
= 20V
40V
80V
40
T
C
= 125°C
75°C
25°C
2
20
0
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
7
V
GS
= 10V
I
D
= 1/2I
D
5
Pulse Test
4
3
2
10
0
7
5
4
3
2
10
–1
–50
0
50
100
150
4.0
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= 10V
I
D
= 1mA
3.2
2.4
1.6
0.8
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch – c)
(°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= 1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
2
7
5
3
2
10
1
7
5
3
D = 1.0
2
10
0
0.5
7
0.2
P
DM
5
3
0.1
tw
2
0.05
T
10
–1
0.02
7
D
=
tw
5
0.01
T
3
Single Pulse
2
10
–2 –4
10 2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
PULSE WIDTH t
w
(s)
Feb.1999
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
