MITSUBISHI Nch POWER MOSFET
FS5ASH-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5.0
Tc = 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
Tc = 25°C
Pulse Test
V
GS
= 2.5V
4V
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
4.0
160
3.0
120
2.0
I
D
= 8A
5A
2A
80
1.0
40
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
DRAIN CURRENT I
D
(A)
0
0
1.0
2.0
3.0
4.0
5.0
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
Tc = 25°C
V
DS
= 10V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
V
DS
= 5V
Pulse Test
T
C
= 25°C
75°C
125°C
DRAIN CURRENT I
D
(A)
6
4
2
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
8
0
0
1.0
2.0
3.0
4.0
5.0
10
0 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
Tch = 25°C
2
f = 1MH
Z
V
GS
= 0V
Ciss
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
Tch = 25°C
V
DD
= 30V
V
GS
= 4V
R
GEN
= R
GS
= 50Ω
t
d(off)
t
f
t
r
t
d(on)
Coss
Crss
10
1
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
0 –1
10
2 3 4 5 7 10
0
2 3 4 5 7 10
1
DRAIN CURRENT I
D
(A)
Feb.1999