MITSUBISHI Nch POWER MOSFET
FS5KM-6
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
T
C
= 25°C
Pulse Test
I
D
= 10A
T
C
= 25°C
Pulse Test
4
V
GS
= 10V
3
20V
32
24
8A
16
2
8
5A
3A
0
4
8
12
16
20
1
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
DRAIN CURRENT I
D
(A)
0
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
1
7
5
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
V
DS
= 10V
Pulse Test
T
C
= 25°C
75°C
125°C
DRAIN CURRENT I
D
(A)
8
6
3
2
10
0
7
5
3
2
10
–1 –1
10
2 3
5 7 10
0
4
2
0
0
4
8
12
16
20
2 3
5 7 10
1
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
3
7
5
Ciss
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
10
2
7
5
3
2
t
d(on)
10
1
7
5
3
2
10
0
10
–1
2 3
5 7 10
0
2 3
5 7 10
1
t
r
Tch = 25°C
V
DD
= 150V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
d(off)
t
f
3
2
10
2
7
5
3
2
10
1
Coss
Crss
7
5 Tch = 25°C
f = 1MHz
3 V
GS
= 0V
2
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
