MITSUBISHI Nch POWER MOSFET
FS5VS-14A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
50
40
30
20
10
0
5.0
4.0
3.0
2.0
1.0
0
T
C
= 25°C
T
C
= 25°C
VGS = 10V
Pulse Test
Pulse Test
20V
I
D
= 10A
5A
2A
0
4
8
12
16
20
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT (A)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
8
101
7
5
T
C
= 25°C
DS = 50V
Pulse Test
V
TC = 25°C
3
2
75°C
125°C
100
7
5
3
2
4
VDS = 10V
Pulse Test
0
10–1
0
4
8
12
16
20
10–1
2
3
5
7 100
2
3
5
7 101
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
103
7
5
Tch = 25°C
V
V
DD = 200V
GS = 10V
103
7
Ciss
RGEN = RGS = 50Ω
5
3
2
3
2
102
7
102
7
5
Coss
Crss
t
d(off)
5
3
2
t
f
3
2
t
r
101
7
Tch = 25°C
f = 1MH
Z
t
d(on)
5
3
VGS = 0V
101
2 3 5 7100 2 3 5 7101 2 3 5 7102
2
10–1
2
3
5
7 100
2
3
5
7 101
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT
ID (A)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
