MITSUBISHI Nch POWER MOSFET
FS70VSJ-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.0
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
T
C
= 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
10.0
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
T
C
= 25°C
Pulse Test
V
GS
= 4V
0.8
8.0
0.6
I
D
= 100A
6.0
10V
0.4
70A
4.0
0.2
30A
2.0
0
0
0
2
4
6
8
10
3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
T
C
= 25°C
V
DS
= 10V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
2
7
5
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
T
C
= 25°C
75°C
125°C
DRAIN CURRENT I
D
(A)
80
3
2
10
1
7
5
3
2
V
DS
= 10V
Pulse Test
60
40
20
0
0
2
4
6
8
10
10
0 0
10
2 3
5 7 10
1
2 3
5 7 10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
10
5
7
5
3
2
10
4
7
5
3
2
Ciss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
SWITCHING TIME (ns)
t
d(off)
t
f
CAPACITANCE
Ciss, Coss, Crss (pF)
3
2
10
2
7
5
3
2
10
1 0
10
2 3
5 7 10
1
t
r
t
d(on)
Tch = 25°C
V
DD
= 30V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
Coss
10
3
7
5
3
2
Crss
3 5 710
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
2 3
5 7 10
2
DRAIN CURRENT I
D
(A)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
