MITSUBISHI Nch POWER MOSFET
FS7SM-18A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
50
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
T
C
= 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5.0
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
T
C
= 25°C
Pulse Test
40
I
D
= 14A
4.0
V
GS
= 10V
30
3.0
20V
20
7A
2.0
10
3A
1.0
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
DRAIN CURRENT I
D
(A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
T
C
= 25°C
V
DS
= 50V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
1
V
DS
= 10V
7
Pulse Test
5
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
T
C
= 25°C
75°C
125°C
DRAIN CURRENT I
D
(A)
16
3
2
10
0
7
5
3
2
12
8
4
0
0
4
8
12
16
20
10
–1 –1
10
2 3
5 7 10
0
2 3
5 7 10
1
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
4
7
5
3
2
10
3
7
5
3
2
10
3
7
5
Ciss
SWITCHING CHARACTERISTICS
(TYPICAL)
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
d(off)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
3
2
10
2
7
5
3
2
10
1 –1
10
2 3
5 7 10
0
t
f
t
r
10
2
7
5
3
Tch = 25°C
2
f = 1MH
Z
10
1
V
GS
= 0V
Coss
Crss
t
d(on)
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2
DRAIN-SOURCE VOLTAGE V
DS
(V)
2 3
5 7 10
1
DRAIN CURRENT I
D
(A)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
