PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX20ASJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
Parameter
(Tch = 25°C)
Test conditions
I
D
= –1mA, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= –30V, V
GS
= 0V
I
D
= –1mA, V
DS
= –10V
I
D
= –10A, V
GS
= –10V
I
D
= –2A, V
GS
= –4V
I
D
= –10A, V
GS
= –10V
I
D
= –10A, V
DS
= –5V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
Limits
Min.
–30
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
–1.8
0.11
0.21
–1.1
5.8
1130
232
83
15
33
49
26
–1.0
—
50
Max.
—
±0.1
–0.1
–2.3
0.13
0.29
–1.3
—
—
—
—
—
—
—
—
–1.5
4.17
—
Unit
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= –15V, I
D
= –10A, V
GS
= –10V, R
GEN
= R
GS
= 50Ω
I
S
= –10A, V
GS
= 0V
Channel to case
I
S
= –10A, dis/dt = 50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
–2
–10
2
32
–7
–5
–3
–2
tw =
10µs
100µs
1ms
T
C
= 25°C
Single Pulse
10ms
DC
24
–10
1
–7
–5
–3
–2
16
8
–10
0
–7
–5
–3
–2
0
0
50
100
150
200
–2 –3 –5 –7
–10
0
–2 –3 –5 –7
–10
1
–2 –3 –5 –7
–10
2
–2
CASE TEMPERATURE T
C
(°C)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
Tc = 25°C
Pulse Test
V
GS
=
–10V
–8V
–7V
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
V
GS
= –10V
–8V
–6V
–5V
–6V
DRAIN CURRENT I
D
(A)
–16
DRAIN CURRENT I
D
(A)
–8
–12
–5V
P
D
= 30W
–6
–4V
–8
–4
–4V
Tc = 25°C
Pulse Test
–3V
–4
–3V
–2
0
0
–1.0
–2.0
–3.0
–4.0
–5.0
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Jan.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
