PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX30ASJ-03
HIGH-SPEED SWITCHING USE
FX30ASJ-03
OUTLINE DRAWING
6.5
5.0 ± 0.2
4
Dimensions in mm
5.5 ± 0.2
1.5 ± 0.2
0.5 ± 0.1
1.0 max
2.3 min
10 max
1.0
A
0.5 ± 0.2
0.8
0.9 max
2.3
2.3
2.3
1
2
3
3
•
4V DRIVE
•
V
DSS
............................................................... –30V
•
r
DS (ON) (MAX)
................................................ 61mΩ
•
I
D
.................................................................... –30A
•
Integrated Fast Recovery Diode (TYP.) ...........50ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
1
1
2
3
4
2 4
GATE
DRAIN
SOURCE
DRAIN
MP-3
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
–30
±20
–30
–120
–30
–30
–120
35
–55 ~ +150
–55 ~ +150
0.26
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
Avalanche drain current (Pulsed) L = 10µH
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
