PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX6KMJ-06
HIGH-SPEED SWITCHING USE
FX6KMJ-06
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ
3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
6.5 ± 0.3
3 ± 0.3
E
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
1
2 3
3
•
4V DRIVE
•
V
DSS
............................................................... –60V
•
r
DS (ON) (MAX)
................................................ 0.21Ω
•
I
D
...................................................................... –6A
•
Integrated Fast Recovery Diode (TYP.) ...........50ns
•
V
iso ................................................................................
2000V
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
2.6 ± 0.2
1
1
GATE
2
DRAIN
3
SOURCE
2
TO-220FN
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
V
iso
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
–60
±20
–6
–24
–6
–6
–24
20
–55 ~ +150
–55 ~ +150
2000
2.0
4.5 ± 0.2
Unit
V
V
A
A
A
A
A
W
°C
°C
V
g
Jan.1999
Avalanche drain current (Pulsed) L = 100µH
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
AC for 1minute, Terminal to case
Typical value
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
