MITSUBISHI Nch POWER MOSFET
FY5ACJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
Parameter
Drain-source breakdown voltage
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 30V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 2.5A, V
GS
= 4V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
Limits
Min.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
1.5
22
34
110
10
760
270
125
15
20
50
40
0.75
—
40
Max.
—
±0.1
0.1
2.0
30
55
150
—
—
—
—
—
—
—
—
1.10
73.5
—
Unit
V
µA
mA
V
mΩ
mΩ
mV
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= 15V, I
D
= 2.5A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
I
S
= 1.6A, V
GS
= 0V
Channel to ambient
I
S
= 1.6A, dis/dt = –50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
5
3
2
tw = 100µs
1.6
10
1
7
5
3
2
1ms
10ms
1.2
0.8
10
0
7
5
3
2
100ms
0.4
10
–1
T
C
= 25°C
0
0
50
100
150
200
7
5
Single Pulse
DC
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2
CASE TEMPERATURE T
C
(°C)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
V
GS
= 10V
8V
6V
5V
OUTPUT CHARACTERISTICS
(TYPICAL)
20
V
GS
= 10V
8V
6V
5V
4V
DRAIN CURRENT I
D
(A)
40
T
C
= 25°C
Pulse Test
4V
DRAIN CURRENT I
D
(A)
16
T
C
= 25°C
Pulse Test
30
12
20
8
3V
10
3V
P
D
= 1.7W
4
P
D
= 1.7W
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Sep.1998
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
