LD43__50
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
POW-R-BLOK
Dual SCR Isolated Module
500 Amperes / Up to 1600 Volts
TM
Electrical Characteristics, T
J
=25°C unless otherwise specified
Characteristics
Repetitive Peak Forward Leakage Current
Repetitive Peak Reverse Leakage Current
Peak On-State Voltage
Threshold Voltage, Low-level
Slope Resistance, Low-level
Threshold Voltage, High-level
Slope Resistance, High-level
V
TM
Coefficients, Full Range
Symbol
I
DRM
I
RRM
V
FM
V
(TO)1
r
T1
V
(TO)2
r
T2
Test Conditions
Up to 1600V, T
J
=130°C
Up to 1600V, T
J
=130°C
I
TM
=1500A
T
J
= 130°C, I = 15%I
T(AV)
to
π
I
T(AV)
T
J
= 130°C, I =
π
I
T(AV)
to I
TSM
T
J
= 130°C, I = 10A to 6kA
V
TM
= A+ B Ln I +C I + D Sqrt I
Minimum dV/dt
Gate Trigger Current
Gate Trigger Voltage
Non-Triggering Gate Voltage
Peak Forward Gate Current
Peak Reverse Gate Voltage
dV/dt
I
GT
V
GT
V
GDM
I
GTM
V
GRM
Exponential to V
DRM
T
j
=130°C, Gate Open
T
j
=25°C, V
D
=12V
T
j
=25°C, V
D
=12V
T
j
=130°C, V
D
= �½ V
DRM
A=
B=
C=
D=
1000 Typ.
200
3.0
0.25
4.0
5
Min.
Max.
80
80
1.30
0.81
0.32
0.90
0.26
0.8824
-4.46E-02
8.12E-05
1.54E-02
V/µs
mA
Volts
Volts
Amp
Volts
Units
mA
mA
V
V
m
Ω
V
m
Ω
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Thermal Impedance Coefficients
Symbol
R
ΘJ-C
Z
Θ
J-C
Per Module, both conducting
Per Junction, both conducting
Z
Θ
J-C
= K
1
(1-exp(-t/
τ
1
))
+ K
2
(1-exp(-t/
τ
2
))
+ K
3
(1-exp(-t/
τ
3
))
Thermal Resistance, Case to Sink Lubricated
R
ΘC-S
+ K
4
(1-exp(-t/
τ
4
))
Per Module
K
1
= 8.03E-04
K
2
= 1.03E-02
K
3
= 1.64E-02
K
4
= 3.75E-02
Max.
0.0325
0.0650
τ
1
= 3.39E-04
τ
2
= 3.15E-03
τ
3
= 0.106
τ
4
= 2.066
0.01
Units
°C/W
°C/W
°C/W
Revision Date: 12/04/2002
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
