PD43__07
PRELIMINARY
POW-R-BLOKTM
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
Dual SCR Isolated Module
700 Amperes / Up to 1800 Volts
Electrical Characteristics, TJ=25 C unless otherwise specified
°
Characteristics
Symbol
Test Conditions
Min.
Max.
Units
Repetitive Peak Forward Leakage Current
Repetitive Peak Reverse Leakage Current
Peak On-State Voltage
IDRM
IRRM
VTM
Up to 1800V, TJ=125 C
100
100
1.30
mA
mA
V
°
Up to 1800V, TJ=125 C
°
ITM=3000A, TJ=125 C
°
π
Threshold Voltage, Low-level
Slope Resistance, Low-level
V(TO)1
rT1
TJ = 125 C, I = 15%IT(AV) to IT(AV)
0.703
0.184
V
°
Ω
m
π
Threshold Voltage, High-level
Slope Resistance, High-level
V(TO)2
rT2
TJ = 125 C, I = IT(AV) to ITSM
1.01
0.117
V
°
Ω
m
VTM Coefficients, Full Range
TJ = 125 C, I = 50A to 6kA
A =
B =
C =
D =
0.7999
°
-4.62 E-02
7.33 E-05
1.10 E-02
V
TM = A+ B Ln I +C I + D Sqrt I
Minimum dV/dt
dV/dt
Exponential to 0.67VDRM
600
V/ s
µ
Tj=125 C, Gate Open
°
Gate Trigger Current
IGT
VGT
Tj=25 C, VD=12V
200
3.0
0.15
300
4.0
5
mA
Volts
Volts
mA
°
Gate Trigger Voltage
Tj=25 C, VD=12V
°
Non-Triggering Gate Voltage
Holding Current
VGDM
IH
Tj=125 C, VD= ½ VDRM
°
Peak Forward Gate Current
Peak Reverse Gate Voltage
Maximum Average Gate Power Dissipation
IGTM
Amp
Volts
Watts
VGRM
PGM (AVE)
16
Thermal Characteristics
Characteristics
Symbol
Max.
Units
Thermal Resistance, Junction to Case
Per Module, both conducting
Per Junction, both conducting
0.029
0.058
C/W
C/W
R
Θ
°
°
J-C
Thermal Impedance Coefficients
Z
Z
= K (1-exp(-t/ ))
K = 5.04 E-04
= 2.47 E-03
= 4.42 E-02
Θ
J-C
Θ
J-C
1
1
1
1
2
t
t
t
t
+ K (1-exp(-t/ ))
K = 2.31 E-03
2
2
2
t
= 1.370
3
+ K (1-exp(-t/ ))
K = 2.83 E-03
3
3
3
t
= 9.668
4
+ K (1-exp(-t/ ))
K =5.24 E-02
4
4
4
t
t
Thermal Resistance, Case to Sink Lubricated
Per Module
0.009
C/W
R
Θ
°
C-S
10/04/2002
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
