MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11013
PS11013
FLAT-BASE TYPE
FLAT-BASE TYPE
INSULATED TYPE
INSULATED TYPE
PS11013
INTEGRATED FUNCTIONS AND FEATURES
• Converter bridge for 3 phase AC-to-DC power conversion.
• Circuit for dynamic braking of motor regenerative energy.
• 3-phase IGBT inverter bridge configured by the latest 3rd.
generation IGBT and diode technology.
• Inverter output current capability I
O
(Note 1):
Type Name
PS11013
100% load
3.0A (rms)
150% over load
4.5A (rms), 1min
(Note 1) : The inverter output current is assumed to be sinu-
soidal and the peak current value of each of the
above loading cases is defined as : I
OP
= I
O
× √
2
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS:
• For inverter side upper-leg IGBTs : Drive circuit, High voltage isolated high-speed level shifting, Short circuit protection (SC).
Bootstrap circuit supply scheme (single drive power supply) and Under voltage protection (UV).
• For inverter side lower-leg IGBTs : Drive circuit, Short circuit protection (SC).
Control supply circuit under- & over- voltage protection (OV/UV).
System over temperature protection (OT). Fault output signaling circuit (F
O
) and Current limit warn-
ing signal output (CL).
• For Brake circuit IGBT : Drive circuit
• Warning and Fault signaling :
F
O1
: Short circuit protection for lower-leg IGBTs and Input interlocking against spurious arm shoot-through.
F
O2
: N-side control supply abnormality locking (OV/UV).
F
O3
: System over-temperature protection (OT).
CL : Warning for inverter current overload condition
• For system feedback control : Analogue signal feedback reproducing actual inverter output phase currents (3φ).
• Input Interface : 5V CMOS/TTL compatible, Schmitt trigger input, and Arm-Shoot-Through interlock protection.
APPLICATION
Acoustic noise-less 0.4kW/AC200V class 3 phase inverter and other motor control applica-
tions
PACKAGE OUTLINES
4-R2
0.5
V
6
12 3 4 5 6
7 8 91011121314151617181920212223
Terminals Assignment:
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
CBU+
CBU–
CBV+
CBV–
CBW+
CBW–
GND
NC
VDH
CL
FO1
FO2
FO3
CU
CV
CW
UP
VP
WP
UN
21 VN
22 WN
23 Br
2424
24
4
2
±
0.3
84.2
±
1
50
2
2-φ4
72
±
0.8
V
0.5
31
32 33 34 35 36 37 38 39 40
1.2
V
Control Pin top
portion details
V
Main terminal top
portion details
0.8
±
0.5
0
24
5.08
±
0.3
!
9 = 45.72
±
0.8
(12.25) 4
4.14
20.4
±
1
27
±
1
V
0.6
2-R4
31
32
33
34
35
36
37
38
39
40
R
S
T
P1
P2
N
B
U
V
W
17.6
±
0.5
3.5
LABEL
54
±
0.5
0.3
0~0.8
0~0.8
8.5
12
0.35MAX
0.4
12
±
0.5
0
0.5
0.6
62
±
1
0.5
±
0.03
(Fig. 1)
Jan. 2000
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
