MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
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PS11017
PS11017
FLAT-BASE TYPE
FLAT-BASE TYPE
INSULATED TYPE
INSULATED TYPE
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Some
aram
etric
limits
PS11017
INTEGRATED FUNCTIONS AND FEATURES
• 3-phase IGBT inverter bridge configured by the latest 3rd.
generation IGBT and diode technologies.
• Circuit for dynamic braking of motor regenerative energy.
• Inverter output current capability I
O
(Note 1):
Type Name
100% load
150% over load
17.0A (rms)
25.5A (rms), 1min
PS11017
(Note 1) : The inverter output current is assumed to be sinu-
soidal and the peak current value of each of the
above loading cases is defined as : I
OP
= I
O
× √
2
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS:
• For P-Side IGBTs : Drive circuit, High voltage isolated high-speed level shifting, Short-circuit protection (SC),
Bootstrap circuit supply scheme (Single drive-power-supply) and Under voltage protection (UV).
• For N-Side IGBTs : Drive circuit, Short circuit protection (SC), Control-supply Under voltage and Over voltage protection (OV/UV), Sys-
tem Over-temperature protection (OT), Fault output (F
O
) signaling circuit, and Current-Limit warning signal output
(CL)
• For Brake circuit IGBT : Drive circuit
• Warning and Fault signaling :
F
O1
: Short circuit protection for lower-leg IGBTs and Input interlocking against spurious arm shoot-through.
F
O2
: N-side control supply abnormality locking (OV/UV)
F
O3
: System over-temperature protection (OT).
CL : Warning for inverter current overload condition
• For system feedback control : Analogue signal feedback reproducing actual inverter phase current (3φ).
• Input Interface : 5V CMOS/TTL compatible, Schmitt trigger input, and Arm-Shoot-Through interlock protection.
APPLICATION
Acoustic noise-less 3.7kW/AC200V class 3 phase inverter and other motor control applica-
tions.
PACKAGE OUTLINES
4-R2
56
±
0.8
15.5
4-φ4.5
MOUNTING
HOLE
20.4
±
1
Terminals Assignment:
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CBU+
CBU–
CBV+
CBV–
CBW+
CBW–
GND
NC
VDH
CL
FO1
FO2
FO3
CU
CV
CW
UP
VP
WP
UN
VN
WN
Br
31
32
33
34
35
36
P
Br
N
U
V
W
10
2
±
0.3
5
0.5
1
7
23
0.5
4-R5
5
4-
φ
6
±
0.3
(22)
41
±
0.5
15.5
60
±
0.5
1
±
0.3
(102)
15.5
3
31
5
1
36
10
12.7
±
0.3
63.5
±
0.8
105
±
0.5
115
±
1
96
2.5
17.5
63
±
0.8
76
±
1
50
32
5
4-φ3.2
3
17
±
0.8
LABEL
(Fig. 1)
May 2001
8.5
13
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
