LQA03TC600
™
Qspeed
Family
600 V, 3 A Q-Series PFC Diode
Product Summary
I
F(AVG)
V
RRM
Q
RR
(Typ at 125 °C)
I
RRM
(Typ at 125 °C)
Softness t
b
/t
a
(Typ at 125 °C)
3
600
17.5
1.28
1.5
A
V
nC
A
General Description
This device has the lowest Q
RR
of any 600 V
Silicon diode.
Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
Pin Assignment
NC
NC
A
•
Power Factor Correction (PFC) Boost Diode
•
Motor drive circuits
•
DC-AC Inverters
Features
•
Low Q
RR
, Low I
RRM
, Low t
RR
•
High dI
F
/dt capable (1000A/µs)
•
Soft recovery
C
Benefits
A
C
TO-220AC
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
•
Increases efficiency
•
Eliminates need for snubber circuits
•
Reduces EMI filter component size & count
•
Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Symbol
V
RRM
I
F(AVG)
I
FSM
I
FSM
T
J(MAX)
T
STG
V
ISOL
P
D
Parameter
Peak repetitive reverse voltage
Average forward current
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Isolation voltage (leads-to-tab)
Power dissipation
Conditions
T
J
= 150 °C, T
C
= 122 °C
60 Hz, �½ cycle
�½ cycle of t=28 µs Sinusoid, T
C
=25 °C
Rating
600
3
30
350
150
–55 to 150
300
2500
32
Units
V
A
A
A
°C
°C
°C
V
W
Leads at 1.6 mm from case, 10 sec
DC, + to tab
T
C
= 25 °C
Thermal Resistance
Symbol
R
θ
JA
R
θ
JC
Resistance from:
Junction to ambient
Junction to case
Conditions
TO-220
TO-220
Rating
62
3.85
Units
°C/W
°C/W
www.powerint.com
January 2011