LQA60A300C
™
Qspeed
Family
300 V, 60 A Q-Series Common-Cathode Diode
Product Summary
I
F(AVG)
per diode
V
RRM
Q
RR
(Typ at 125 °C)
I
RRM
(Typ at 125 °C)
Softness t
b
/t
a
(Typ at 125 °C)
30
300
53
2.85
0.6
A
V
nC
A
General Description
This device has the lowest Q
RR
of any 300V
Silicon diode.
Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
Pin Assignment
•
AC/DC and DC/DC output rectification
•
Output & freewheeling diodes
•
Motor drive circuits
•
DC-AC inverters
A1
K
A2
Features
K
(Backside
Heatsink)
•
Low Q
RR
, Low I
RRM
, Low t
RR
•
High dI
F
/dt capable (1000A/µs)
•
Soft recovery
TO-247 AD
A1
A2
K
Benefits
•
Increases efficiency
•
Eliminates need for snubber circuits
•
Reduces EMI filter component size & count
•
Enables extremely fast switching
RoHS Compliant
Package uses Lead-free plating and Green mold
compound.Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Symbol
V
RRM
I
F(AVG)
I
FSM
I
FSM
T
J
T
STG
P
D
Parameter
Peak repetitive reverse voltage
Average forward current
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Power dissipation
Conditions
Per Diode, T
J
= 150 °C, T
C
= 99 °C
Per Device, T
J
= 150 °C, T
C
= 99 °C
Per Diode, 60 Hz, �½ cycle
Per Diode, �½ cycle of t = 28 µs Sinusoid,
T
C
= 25 °C
Rating
300
30
60
200
350
150
–55 to 150
300
113
Units
V
A
A
A
A
°C
°C
°C
W
Leads at 1.6mm from case, 10 sec
T
C
= 25 °C
Thermal Resistance
Symbol
R
θ
JA
R
θ
JC
Resistance from:
Junction to ambient
Junction to case
Conditions
Per Device
Per Diode
Per Device
Rating
40 (Typ)
1.1
0.6
Units
°C/W
°C/W
°C/W
www.powerint.com
January 2011
POWERINT [ POWER INTEGRATIONS, INC. ]
