LXA04T600, LXA04B600
™
QSpeed
Family
600 V, 4 A X-Series PFC Diode
Product Summary
I
F(AVG)
V
RRM
Q
RR
(Typ at 125 °C)
I
RRM
(Typ at 125 °C)
Softness t
b
/t
a
(Typ at 125 °C)
4
600
50
2.6
0.8
A
V
nC
A
General Description
This device has the lowest Q
RR
of any 600V
Silicon diode.
Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
Pin Assignment
K
Power Factor Correction (PFC) Boost Diode
Motor drive circuits
DC-AC Inverters
K
NC
K
K
A
Features
Low Q
RR
, Low I
RRM
, Low t
RR
High dI
F
/dt capable (1000A/µs)
Soft recovery
A
TO-220AC
LXA04T600
TO-263AB
LXA04B600
Benefits
Increases efficiency
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
A
K
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
V
RRM
I
F(AVG)
I
FSM
I
FSM
T
J(MAX)
T
STG
P
D
V
RRM
Parameter
Peak repetitive reverse voltage
Average forward current
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Power dissipation
Peak repetitive reverse voltage
Conditions
T
J
= 150 °C, T
C
= 127 °C
60 Hz, �½ cycle
�½ cycle of t=28
μs
Sinusoid, T
C
=25 °C
Rating
600
4
30
350
150
–55 to 150
300
52
600
Units
V
A
A
A
°C
°C
°C
W
V
Leads at 1.6 mm from case, 10 sec
T
C
= 25 °C
Thermal Resistance
Symbol
R
JA
R
JC
Resistance from:
Junction to ambient
Junction to case
Conditions
TO-220 (Only)
Rating
62
2.4
Units
°C/W
°C/W
www.powerint.com
January 2011