LXA08T600C
™
Qspeed
Family
600 V, 8 A X-Series Common-Cathode Diode
Product Summary
I
F(AVG)
per diode
V
RRM
Q
RR
(Typ at 125 °C)
I
RRM
(Typ at 125 °C)
Softness t
b
/t
a
(Typ at 125 °C)
4
600
50
2.6
0.8
A
V
nC
A
General Description
This device has the lowest Q
RR
of any 600V
Silicon diode.
Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
Pin Assignment
•
Power Factor Correction (PFC) Boost Diode
•
Motor drive circuits
•
DC-AC inverters
Features
•
Low Q
RR
, Low I
RRM
, Low t
RR
•
High dI
F
/dt capable (1000A/µs)
•
Soft recovery
TO-220AB
A1
A2
K
Benefits
•
Increases efficiency
•
Eliminates need for snubber circuits
•
Reduces EMI filter component size & count
•
Enables extremely fast switching
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
V
RRM
I
F(AVG)
I
FSM
I
FSM
T
J
T
STG
Parameter
Peak repetitive reverse voltage
Average forward current
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Conditions
Per Diode, T
J
= 150 °C, T
C
= 127°C
Per Device, T
J
= 150 °C, T
C
= 127°C
60 Hz, �½ cycle
�½ cycle of t = 28 µs Sinusoid, T
C
= 25 °C
Rating
600
4
8
30
350
150
–55 to 150
300
Units
V
A
A
A
A
°C
°C
°C
Leads at 1.6mm from case, 10 sec
Thermal Resistance
Symbol
R
θ
JA
R
θ
JC
Resistance from:
Junction to ambient
Junction to case
Conditions
TO-220AB
Per Diode
Per Device
Rating
62
2.4
1.2
Units
°C/W
°C/W
°C/W
www.powerint.com
January 2011
POWERINT [ POWER INTEGRATIONS, INC. ]
