LXA08T600, LXA08B600, LXA08FP600
™
Qspeed
Family
600 V, 8 A X-Series PFC Diode
Product Summary
I
F(AVG)
V
RRM
Q
RR
(Typ at 125 °C)
I
RRM
(Typ at 125 °C)
Softness t
b
/t
a
(Typ at 125 °C)
8
600
82
3.5
0.55
A
V
nC
A
General Description
This device has the lowest Q
RR
of any 600V
Silicon diode.
Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
Pin Assignment
K
K
•
•
•
Power Factor Correction (PFC) Boost Diode
Motor drive circuits
DC-AC Inverters
NC
K
K
A
Features
•
•
•
•
Low Q
RR
, Low I
RRM
, Low t
RR
High dI
F
/dt capable (1000A/µs)
Soft recovery
FullPak Insulation = 2500V
RMS
A
TO-220AC
LXA08T600
TO-263AB
LXA08B600
Benefits
•
K
A
TO-220 FullPak
LXA08FP600
A
K
Increases efficiency
•
Eliminates need for snubber circuits
•
Reduces EMI filter component size & count
•
Enables extremely fast switching
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
V
RRM
I
F(AVG)
I
FSM
I
FSM
T
J(MAX)
T
STG
Parameter
Peak repetitive reverse voltage
Average forward current
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Power dissipation
Conditions
T
J
= 150 °C, T
C
= 122 °C (220AC, 263AB)
T
J
= 150 °C, T
C
= 81°C. (FullPak)
60 Hz, �½ cycle
�½ cycle of t=28 µs Sinusoid, T
C
=25 °C
Rating
600
8
60
350
150
–55 to 150
300
83
34
Units
V
A
A
A
°C
°C
°C
W
W
P
D
Leads at 1.6 mm from case, 10 sec
T
C
= 25 °C. (220AC, 263AB)
T
C
= 25°C. (FullPak)
www.powerint.com
January 2011