LXA10T600, LXA10FP600
™
Qspeed
Family
600 V, 10 A X-Series PFC Diode
Product Summary
I
F(AVG)
V
RRM
Q
RR
(Typ at 125 °C)
I
RRM
(Typ at 125 °C)
Softness t
b
/t
a
(Typ at 125 °C)
10
600
94
3.85
0.5
A
V
nC
A
General Description
This device has the lowest Q
RR
of any 600V
Silicon diode.
Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
Pin Assignment
K
•
Power Factor Correction (PFC) Boost Diode
•
Motor drive circuits
•
DC-AC Inverters
K
A
K
A
Features
FullPak
LXA10FP600
•
•
•
•
Low Q
RR
, Low I
RRM
, Low t
RR
High dI
F
/dt capable (1000A/µs)
Soft recovery
FullPak Insulation = 2500V
RMS
TO-220AC
LXA010T600
A
K
Benefits
•
Increases efficiency
•
Eliminates need for snubber circuits
•
Reduces EMI filter component size & count
•
Enables extremely fast switching
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Symbol
V
RRM
I
F(AVG)
I
FSM
I
FSM
T
J(MAX)
T
STG
Parameter
Peak repetitive reverse voltage
Average forward current
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Power dissipation
Conditions
T
J
= 150 °C, T
C
= 118°C (TO-220AC)
T
J
= 150 °C, T
C
= 67°C (FullPak)
60 Hz, �½ cycle
�½ cycle of t=28 µs Sinusoid, T
C
=25 °C
Rating
600
10
70
350
150
–55 to 150
300
89
35
Units
V
A
A
A
°C
°C
°C
W
W
P
D
Leads at 1.6 mm from case, 10 sec
T
C
= 25 °C (TO-220AC)
T
C
= 25 °C (FullPak)
Thermal Resistance
Symbol
R
θ
JC
R
θ
JC
Resistance from:
Junction to case
Junction to case
Conditions
TO-220AC
FullPak
Rating
1.4
3.6
Units
°C/W
°C/W
www.powerint.com
January 2011