QH03TZ600
™
Qspeed
Family
600 V, 3 A H-Series PFC Diode
Product Summary
I
F(AVG)
V
RRM
Q
RR
(Typ at 125 °C)
I
RRM
(Typ at 125 °C)
Softness t
b
/t
a
(Typ at 125 °C)
3
600
14.8
1.35
1.1
A
V
nC
A
General Description
This device has the lowest Q
RR
of any 600V
Silicon diode.
Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
Pin Assignment
NC
•
Power Factor Correction (PFC) Boost Diode
•
Motor drive circuits
•
DC-AC Inverters
Features
•
Low Q
RR
, Low I
RRM
, Low t
RR
•
High dI
F
/dt capable (1000A/µs)
•
Soft recovery
C
A
Benefits
A
C
•
Increases efficiency
•
Eliminates need for snubber circuits
•
Reduces EMI filter component size & count
•
Enables extremely fast switching
TO-220AC
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
V
RRM
I
F(AVG)
I
FSM
I
FSM
T
J(MAX)
T
STG
V
ISOL
P
D
Parameter
Peak repetitive reverse voltage
Average forward current
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Isolation voltage (leads-to-tab)
Power dissipation
Conditions
T
J
= 150 °C, T
C
= 120°C
60 Hz, ½ cycle
½ cycle of t=28 µs Sinusoid, T
C
=25 °C
Rating
600
3
35
350
150
–55 to 150
300
2500
30.4
Units
V
A
A
A
°C
°C
°C
V
W
Leads at 1.6 mm from case, 10 sec
AC
T
C
= 25 °C
Thermal Resistance
Symbol
R
θ
JA
R
θ
JC
Resistance from:
Junction to ambient
Junction to case
Conditions
TO-220
TO-220
Rating
62
4.1
Units
°C/W
°C/W
www.powerint.com
January 2011
POWERINT [ POWER INTEGRATIONS, INC. ]
