QH08TZ600
Electrical Specifications
at T
J
= 25
°C
(unless otherwise specified)
Symbol
I
R
V
F
C
J
t
RR
Q
RR
I
RRM
S
Parameter
Reverse current
Forward voltage
Junction capacitance
Reverse recovery time
Reverse recovery charge
Maximum reverse
recovery current
Conditions
V
R
= 600 V, T
J
= 25 °C
V
R
= 600 V, T
J
= 125 °C
I
F
= 8 A, T
J
= 25 °C
I
F
= 8 A, T
J
= 150 °C
V
R
= 10 V, 1 MHz
dI/dt =200 A/µs
V
R
=400 V, I
F
=8 A
dI/dt =200 A/µs
V
R
=400 V, I
F
=8 A
dI/dt =200 A/µs
V
R
=400 V, I
F
=8 A
T
J
=25 °C
T
J
=125 °C
T
J
=25 °C
T
J
=125 °C
T
J
=25 °C
T
J
=125 °C
T
J
=25 °C
T
J
=125 °C
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
0.5
2.6
2.23
25
11.1
19.5
8.0
25.5
1.14
1.9
0.7
0.75
Max
250
-
3.15
-
-
-
-
13.5
-
1.7
-
-
-
Units
µA
mA
V
V
pF
ns
ns
nC
nC
A
A
DC Characteristics
Dynamic Characteristics
t
Softness factor =
b
t
a
dI/dt =200 A/µs
V
R
=400 V, I
F
=8 A
Note to component engineers:
H-Series diodes employ Schottky technologies in their design and construction.
Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups.
(For additional details, see Application Note AN-300.)
VR
L1
D1
DUT
I
F
dI
F
/dt
0
t
RR
t
a
t
b
0.1xI
RRM
I
RRM
15V
Pulse generator
+
Rg
Q1
Figure 1. Reverse Recovery Definitions
Figure 2. Reverse Recovery Test Circuit
2
www.powerint.com
Rev 1.1 01/11
POWERINT [ POWER INTEGRATIONS, INC. ]
