PSB 41
IF(OV)
------
IFSM
200
[A]
150
1:TVJ= 150°C
2:TVJ= 25°C
IFSM (A)
TVJ=45°C
TVJ=150°C
500
550
4
10
2
As
1.6
1.4
1.2
1
100
10
3
TVJ=45°C
TVJ=150°C
50
IF
0
0.5
1
1.5
VF[V]
2
2.5
1
0 VRRM
0.8
1/2 VRRM
2
0.6
0.4
10
0
10
1
1 VRRM
10
t[ms] 10
2
10
3
2
1
2
4
t [ms]
6
10
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
80
85
90
95
100
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
200
[W]
175
150
125
100
75
50
25
PVTOT
0
PSB 41
0.26 0.14 = RTHCA [K/W]
0.39
TC
50
DC
sin.180°
40
rec.120°
rec.60°
rec.30°
30
0.64
105
110
115
1.14
120
125
130
I20
D
DC
sin.180°
rec.120°
rec.60°
rec.30°
IFAVM
20
40
0
[A]
2.64
135
140
145
150
10
°C
Tamb
50
100
[K]
150
0
50
100
T (°C)
C
150
200
Fig. 4 Power dissipation versus direct output current and ambient
temperature
K/W
Fig.5 Maximum forward current
at case temperature
3
2
Z thJK
Z thJC
1
Zth
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM [ POWERSEM GMBH ]
