PSBH 75
Symbol
I
D
, I
R
V
T
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
Characteristic Value
5
1.57
0.85
6
1.0
1.6
100
150
0.2
5
200
150
2
150
0.66
0.165
0.93
0.2325
8.0
4.5
50
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
µs
µs
K/W
K/W
K/W
K/W
mm
mm
m/s
2
T
VJ
= T
VJM
, V
R
= V
RRM
, V
D
= V
DRM
≤
I
T
= 150A, T
VJ
= 25°C
≤
For power-loss calculations only (T
VJ
= T
VJM
)
V
D
= 6V
V
D
= 6V
T
VJ
= T
VJM
T
VJ
= T
VJM
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
V
D
= 2/3 V
DRM
≤
≤
≤
≤
≤
≤
≤
≤
≤
T
VJ
= 25°C, t
P
= 10µs
I
G
= 0.3A, di
G
/dt = 0.3A/µs
T
VJ
= 25°C, V
D
= 6V, R
GK
=
∞
T
VJ
= 25°C, V
D
= �½ V
DRM
I
G
= 0.3A, di
G
/dt = 0.3A/µs
T
VJ
= T
VJM
, I
T
= 20A, t
P
= 200µs, V
R
= 100V
-di/dt = 10A/µs, dv/dt = 15V/µs, V
D
= 2/3 V
DRM
per thyristor; sine 180°el
per module
per thyristor; sine 180° el
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
300
1:T VJ= 125°C
[A]
250 2:TVJ = 25°C
200
150
100
T
us
VJ
=25°C
I
T(OV)
------
ITSM
ITSM (A)
TVJ=45°C
TVJ=150°C
1000
1.6
1150
100
1.4
tgd
1.2
1
10
0 VRRM
50
IF
0
0.5
0.8
1/2 VRRM
1
1
V F [V]
2
1.5
2
1
10
100
I [mA]
G
1000
0.6
1 VRRM
0.4
10
0
10
1
t[ms]
10
2
10
3
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
Fig. 2 Gate trigger delay time
Fig. 3 Surge overload current
per diode (or thyristor) I
FSM
,
I
TSM
: Crest value t: duration
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM [ POWERSEM GMBH ]
