PSD 95
IF(OV)
------
IFSM
200
A
10
IFSM (A)
TVJ=45°C
TVJ=150°C
1200
1040
4
160
T=150°C
1.6
2
As
TVJ=45°C
TVJ=150°C
1.4
1.2
1
0 VRRM
120
80
40
IF
0.8
1/2 VRRM
T=25°C
0.6
0.4
1 VRRM
10
3
1
2
4
t [ms]
6
10
0
VF
1
1.5
V
10
0
10
1
t[ms] 10
2
10
3
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
TC
0.1 0.05
0.15
= RTHCA [K/W]
80
85
90
95
75
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
500
[W]
400
PSD 95
150
DC
[A]
sin.180°
rec.120°
rec.60°
100
rec.30°
300
0.25
100
105
110
115
200
DC
sin.180°
rec.120°
rec.60°
rec.30°
25
IFAVM
75
125 0
[A]
0.45
120
125
130
50
100
PVTOT
0
1.05
135
140
145
150
IdAV
0
50
100
T (°C)
C
150
200
°C
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current
temperature
at case temperature
K/W
1.2
1
0.8
0.6
0.4
0.2
Z th
Z thJK
Z thJC
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM [ POWERSEM GMBH ]
