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PSHI10006 参数 Datasheet PDF下载

PSHI10006图片预览
型号: PSHI10006
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块的H桥配置 [IGBT Module H-Bridge Configuration]
分类和应用: 双极性晶体管
文件页数/大小: 4 页 / 132 K
品牌: POWERSEM [ POWERSEM GMBH ]
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ECO-PAC 2
PSHI 100/06*
H-Bridge Configuration
Preliminary Data Sheet
TM
IGBT Module
I
C25
= 69 A
V
CES
= 600 V
V
CE(sat)typ.
= 2.3 V
Short Circuit SOA Capability
Square RBSOA
F10
A1
K10
K13
H13
S18
N9
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
Conditions
T
VJ
= 25°C to 150°C
NTC
P18
PSHI 100/06*
*NTC optional
Features
Maximum Ratings
600
± 20
69
48
100
V
CES
10
208
V
V
A
A
A
µs
W
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.3
2.8
4.5
2.8
6.5
0.8
4.4
100
50
55
300
30
1.8
1.4
2.8
1.2
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.6 K/W
K/W
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Isolation voltage 3000 V
UL registered, E 148688
Advantages
space and weight savings
reduced protection circuits
package designed for wave
soldering
High power density
Easy to mount with two screws
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
= ± 20 V
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 40 A
V
GE
= 15/0 V; R
G
= 22
Typical Applications
motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20