欢迎访问ic37.com |
会员登录 免费注册
发布采购

PSHI25-06 参数 Datasheet PDF下载

PSHI25-06图片预览
型号: PSHI25-06
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块的H桥配置 [IGBT Module H-Bridge Configuration]
分类和应用: 双极性晶体管
文件页数/大小: 4 页 / 132 K
品牌: POWERSEM [ POWERSEM GMBH ]
 浏览型号PSHI25-06的Datasheet PDF文件第2页浏览型号PSHI25-06的Datasheet PDF文件第3页浏览型号PSHI25-06的Datasheet PDF文件第4页  
ECO-PAC
TM
2
PSHI 25/06*
H-Bridge Configuration
Short Circuit SOA Capability
Square RBSOA
F10
A1
Preliminary Data Sheet
IGBT Module
I
C25
= 24.5 A
V
CES
= 600 V
V
CE(sat)typ.
= 2.4 V
K10
K13
H13
S18
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
N9
Conditions
T
VJ
= 25°C to 150°C
NTC
P18
PSHI 25/06*
600
± 20
24.5
17
30
V
CES
10
82
µs
W
V
V
A
A
A
Features
Maximum Ratings
*NTC optional
V
GE
= ±15 V; R
G
= 68
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 68
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.4
2.9
2.9
6.5
0.6
2.7
100
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 25 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.4 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V;
T
VJ
= 25°C
T
VJ
= 125°C
4.5
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Isolation voltage 3000 V
UL registered, E 148688
Advantages
space and weight savings
reduced protection circuits
package designed for wave
soldering
High power density
Easy to mount with two screws
V
CE
= 0 V; V
GE
= ± 20 V
30
45
270
40
0.7
0.5
8
3
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 15 A
V
GE
= 15/0 V; R
G
= 68
Typical Applications
motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
1.52 K/W
K/W
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20