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PSHM120D-01 参数 Datasheet PDF下载

PSHM120D-01图片预览
型号: PSHM120D-01
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用:
文件页数/大小: 4 页 / 124 K
品牌: POWERSEM [ POWERSEM GMBH ]
 浏览型号PSHM120D-01的Datasheet PDF文件第2页浏览型号PSHM120D-01的Datasheet PDF文件第3页浏览型号PSHM120D-01的Datasheet PDF文件第4页  
ECO-PAC
TM
2
Power MOSFET
in ECO-PAC 2
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
PSHM 120D/01
L4
L6
L9
P18
R18
K12
F10
NTC
K13
I
D25
V
DSS
R
DSon
t
rr
= 75 A
= 100 V
= 25 mΩ
<
200 ns
Preliminary Data Sheet
MOSFETs
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
Symbol
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 2
T
C
= 25°C
Test Conditions
Maximum Ratings
100
100
±20
±30
75
300
75
30
5
300
V
V
V
V
A
A
A
mJ
V/ns
W
Features
• HiPerFET
TM
technology
- low R
DSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
• ECO-PAC 2 package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- solderable pins for PCB mounting
• UL registered, E 148688
Applications
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
100
2.0
4
±100
250
1
25
25
30
4500
1600
800
20
60
80
60
180
36
85
0.25
30
110
110
90
260
70
160
0.5
V
V
nA
µA
mA
m
S
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
; T
J
= 25°C
V
GS
= 0 V;
T
J
= 125°C
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t < 300 µs, duty cycle d < 2%
V
DS
= 10 V; I
D
= I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
• drives and power supplies
• battery or fuel cell powered
pF
• automotive, industrial vehicle etc.
pF
pF
• secondary side of mains power
supplies
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
Ω,
(External)
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
nC
nC
nC
K/W
K/W
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These Devices are sensitive to electrostatic discharge. Users
should observe proper ESD handling precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20