PSIG PSI PSIS PSSI 25/12
6
mJ
E
on
120
ns
t
d(on)
80
V
CE
= 600V
V
GE
= ±15V
R
G
= 82Ω
T
VJ
= 125°C
6
mJ
t
E
off
600
ns
400 t
E
off
t
d(off)
V
CE
= 600V
V
GE
= ±15V
R
G
= 82Ω
T
VJ
= 125°C
4
4
t
r
2
E
on
40
2
200
t
f
0
0
10
20
I
C
25T120
0
0
0
10
20
I
C
25T120
0
30
A
30 A
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
2,0
mJ
E
off
t
d(off)
800
ns
600
t
3
mJ
E
on
E
on
t
d(on)
t
r
150
ns
100
t
E
off
1,5
V
CE
= 600V
V
GE
= ±15V
I
C
= 15A
T
VJ
= 125°C
2
1
V
CE
= 600V
V
GE
= ±15V
50
I
C
= 15A
T
VJ
= 125°C
25T120
1,0
400
0,5
200
t
f
0
0
20
40
60
80
100
R
G
0
0,0
0
20
40
60
80
100
R
G
25T120
0
120
Ω
140
120
Ω
140
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
Z
thJC
1
IGBT
diode
40
A
I
CM
30
0,1
20
0,01
10
R
G
= 82
Ω
T
VJ
= 125°C
0,001
25T120
single pulse
0
0
200
400
600
V
CE
800 1000 1200 1400
V
0,0001
0,00001 0,0001 0,001
VDI...25-12P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance RBSOA
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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